NF-Series

Combining 5th generation CSTBT^TM (Carrier Stored Trench Gate Bipolar Transistor) chip technology with a LPT (Light Punch-through) wafer for:

• Low VCE(sat)                     (Typ. 1.7V @ Tj=125°C for 600V and 2.0V @ Tj=125°C for 1200V)
• High Short Circuit Robustness
• Reduced Gate Capacitance
• Showing one rank higher performance compared to competition
• Standard dual package equal to well accepted H-Series package
• Excellent thermal conductivity by AlN isolation substrate
• Low internal inductance (half of H-Series)
• Significant improvement of power cycling capability by new wire bonding technology
• Also available as Mega Power Dual IGBT Modules 1200V (900 & 1400A) for High Power UPS, Distributed Power Generation and General Purpose Inverters
  

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