Mitsubishi has launched the 6th Generation NX-Series IGBT Modules

• 6th Gen. IGBT with CSTBT™ Chip Technology
• For 1200V modules: Vce(sat)=1.90V(typ)@Tj=150°C and wide SOA@Vcc=900V
• More than 10µsec of short circuit capability and excellent paralleling characteristics
• 6th Generation Free Wheeling Diode Chip with positive temperature coefficient and optimised trade-off between Vf and Erec 
• Tj(max)=175°C
• UL certification
• RoHS compliant

Mitsubishi has launched the 6th Generation V1-Series IPMs

• Low Loss by Full Gate CSTBT™ Chip
• 600V module: Vce(sat)=1.75V(tipik)@Tj=125°C
• 1200V module: Vce(sat)=1.85V(tipik)@Tj=125°C
• Optimized on chip temperature sensor
• Signigicantly increased power cycling capability
• V-Serisi small package mechanical compatibility
• Short circuit protection (SC)
• Control supply under voltage protection (UV)
• Over temperature protection sensed from on chip sensor (OT)
• Fault output signal (Fo)